so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 features extremely low minority carrier lifetime very low capacitance low reverse leakage absolute maximum ratings ta = 25 symbol value unit mbd110dw t1 7 mbd330dw t1 30 mbd770dw t1 70 p f 120 ma t j -55to+125 t stg -55to+150 junction temperature storage temperature range vdc parameter reverse voltage v r forward power dissipation t a =25 sales@twtysemi.com 1 of 2 http://www.twtysemi.com MBD110DWT1 mbd330dwt1;mbd770dwt1 product specification 4008-318-123
marking type MBD110DWT1 mmbd330dwt1 mbd770dwt1 marking m4 t4 h5 electrical characteristics ta = 25 symbol conditions min typ max unit MBD110DWT1 7.0 10 mbd330dwt1 30 mbd770dwt1 70 diode capacitance MBD110DWT1 c t v r = 0, f = 1.0 mhz 0.88 1.0 pf mbd330dwt1 v r = 15 volts, f = 1.0 mhz 0.9 1.5 mbd770dwt1 v r = 20 volts, f = 1.0 mhz 0.5 1.0 MBD110DWT1 v r = 3.0 v 0.02 0.25 a mbd330dwt1 v r = 25 v 13 200 nadc mbd770dwt1 v r = 35 v 9 200 nadc noise figure MBD110DWT1 nf f = 1.0 ghz 6 db MBD110DWT1 i f =10ma 0.5 0.6 mbd330dwt1 i f = 1.0 madc 0.38 0.45 i f = 10 ma 0.52 0.6 mbd770dwt1 i f = 1.0 madc 0.47 0.5 i f =10ma 0.7 1.0 pf total capacitance c t vdc forward voltage parameter v br(r) i r v f reverse breakdown voltage reverse leakage i r =10 a volts MBD110DWT1 mbd330dwt1;mbd770dwt1 sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
|
